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LSC11N60 Datasheet - Lonten

LSC11N60 N-channel MOSFET

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 650V RDS(ON),max 0.35Ω.

LSC11N60 Features

* Ultra low Rdson

* Ultra low gate charge (typ. Qg = 34nC)

* 100% UIS tested

* RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage

LSC11N60-Lonten.pdf

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Datasheet Details

Part number:

LSC11N60

Manufacturer:

Lonten

File Size:

481.15 KB

Description:

N-channel mosfet.

LSC11N60 Distributor

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LSC11N60 LSC11N60 N-channel MOSFET Lonten