LSC11N60 - N-channel MOSFET
LonFETTM Power MOSFET is fabricated using advanced super junction technology.
The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Product Summary VDS @ Tj,max 650V RDS(ON),max 0.35Ω
LSC11N60 Features
* Ultra low Rdson
* Ultra low gate charge (typ. Qg = 34nC)
* 100% UIS tested
* RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage
