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LSC11N60 - N-channel MOSFET

Datasheet Summary

Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

  • Ultra low Rdson.
  • Ultra low gate charge (typ. Qg = 34nC).
  • 100% UIS tested.
  • RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Conti.

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Datasheet Details

Part number LSC11N60
Manufacturer Lonten
File Size 481.15 KB
Description N-channel MOSFET
Datasheet download datasheet LSC11N60 Datasheet
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Full PDF Text Transcription

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LSC11N60 LonFET Lonten N-channel 600V, 11A, 0.35Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 650V RDS(ON),max 0.35Ω IDM 30A Qg,typ 34nC Features  Ultra low Rdson  Ultra low gate charge (typ.
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