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MAGX-000035-010000

Power Transistor

MAGX-000035-010000 Features

*  GaN Depletion-Mode HEMT Microwave Transistor

*  Common-Source configuration

*  No internal matching

*  Broadband Class AB operation

*  RoHS

* Compliant

*  +50 V Typical Operation

*  MTTF = 600 years Description The MAGX-000035-01000X is a gold-metalized unmatched Ga

MAGX-000035-010000 General Description

The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth.

MAGX-000035-010000 Datasheet (585.07 KB)

Preview of MAGX-000035-010000 PDF

Datasheet Details

Part number:

MAGX-000035-010000

Manufacturer:

MA-COM

File Size:

585.07 KB

Description:

Power transistor.

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TAGS

MAGX-000035-010000 Power Transistor MA-COM

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