Description
MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz .
The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power a.
Features
* GaN Depletion-Mode HEMT Microwave Transistor
* Common-Source configuration
* No internal matching
* Broadband Class AB operation
* RoHS
* Compliant
* +50 V Typical Operation
Applications
* Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01000X is constructed with either a flanged or flangeless ceramic
