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MAGX-000035-01000S, MAGX-000035-010000-MA Power Transistor

MAGX-000035-01000S Description

MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz .
The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power a.

MAGX-000035-01000S Features

*  GaN Depletion-Mode HEMT Microwave Transistor
*  Common-Source configuration
*  No internal matching
*  Broadband Class AB operation
*  RoHS
* Compliant
*  +50 V Typical Operation

MAGX-000035-01000S Applications

* Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01000X is constructed with either a flanged or flangeless ceramic

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MAGX-000035-01000S, MAGX-000035-010000-MA. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MAGX-000035-01000S, MAGX-000035-010000-MA
Manufacturer
MA-COM
File Size
585.07 KB
Datasheet
MAGX-000035-010000-MA-COM.pdf
Description
Power Transistor
Note
This datasheet PDF includes multiple part numbers: MAGX-000035-01000S, MAGX-000035-010000-MA.
Please refer to the document for exact specifications by model.

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Power Transistor MA-COM
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