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MAGX-011086 - GaN Wideband Transistor

This page provides the datasheet information for the MAGX-011086, a member of the MAGX-011086-MA GaN Wideband Transistor family.

Description

The MAGX-011086 is a GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications.

Features

  • GaN on Si HEMT D-Mode Amplifier.
  • Suitable for Linear & Saturated.

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Datasheet preview – MAGX-011086

Datasheet Details

Part number MAGX-011086
Manufacturer MA-COM
File Size 1.50 MB
Description GaN Wideband Transistor
Datasheet download datasheet MAGX-011086 Datasheet
Additional preview pages of the MAGX-011086 datasheet.

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Full PDF Text Transcription

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MAGX-011086 GaN on Silicon General Purpose Amplifier DC - 6 GHz, 28 V, 4 W Features  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturated Applications  Tunable from DC - 6 GHz  28 V Operation  9 dB Gain @ 5.8 GHz  45% Drain Efficiency @ 5.8 GHz  100% RF Tested  Thermally-Enhanced 4 mm 24-Lead QFN  RoHS* Compliant Rev. V3 Description The MAGX-011086 is a GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. The device has been designed for saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low inductance, surface mount QFN package.
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