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MAGX-011086 - GaN Wideband Transistor

Download the MAGX-011086 datasheet PDF. This datasheet also covers the MAGX-011086-MA variant, as both devices belong to the same gan wideband transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAGX-011086 is a GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications.

Key Features

  • GaN on Si HEMT D-Mode Amplifier.
  • Suitable for Linear & Saturated.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAGX-011086-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MAGX-011086 GaN on Silicon General Purpose Amplifier DC - 6 GHz, 28 V, 4 W Features  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturated Applications  Tunable from DC - 6 GHz  28 V Operation  9 dB Gain @ 5.8 GHz  45% Drain Efficiency @ 5.8 GHz  100% RF Tested  Thermally-Enhanced 4 mm 24-Lead QFN  RoHS* Compliant Rev. V3 Description The MAGX-011086 is a GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. The device has been designed for saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low inductance, surface mount QFN package.