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MAGX-000035-015000

Power Transistor

MAGX-000035-015000 Features

*  GaN on SiC Depletion Mode Transistor

*  Common-Source Configuration

*  Broadband Class AB Operation

*  Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu)

*  RoHS

* Compliant

*  +50V Typical Operation

*  MTTF = 600 years (TJ < 200°C) Primary Applications

MAGX-000035-015000 General Description

The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth.

MAGX-000035-015000 Datasheet (763.50 KB)

Preview of MAGX-000035-015000 PDF

Datasheet Details

Part number:

MAGX-000035-015000

Manufacturer:

MA-COM

File Size:

763.50 KB

Description:

Power transistor.

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TAGS

MAGX-000035-015000 Power Transistor MA-COM

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