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MAGX-000035-01000P, MAGX-000035-01000P-MA Datasheet - MA-COM

MAGX-000035-01000P - Pulsed Transistor

The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology.

Use of an internal stress buffer technology allows rel

MAGX-000035-01000P Features

* GaN on SiC D-Mode Transistor Technology

* Unmatched, Ideal for Pulsed / CW Applications

* 50 V Typical Bias, Class AB

* Common-Source Configuration

* Thermally-Enhanced 3 x 6 mm 14-Lead DFN

* MTTF = 600 years (TJ < 200°C)

* Halogen-Free “Green” Mold Compound

* RoHS

MAGX-000035-01000P-MA-COM.pdf

This datasheet PDF includes multiple part numbers: MAGX-000035-01000P, MAGX-000035-01000P-MA. Please refer to the document for exact specifications by model.
MAGX-000035-01000P Datasheet Preview Page 2 MAGX-000035-01000P Datasheet Preview Page 3

Datasheet Details

Part number:

MAGX-000035-01000P, MAGX-000035-01000P-MA

Manufacturer:

MA-COM

File Size:

1.09 MB

Description:

Pulsed transistor.

Note:

This datasheet PDF includes multiple part numbers: MAGX-000035-01000P, MAGX-000035-01000P-MA.
Please refer to the document for exact specifications by model.

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