MAGX-000035-01000P - Pulsed Transistor
The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology.
Use of an internal stress buffer technology allows rel
MAGX-000035-01000P Features
* GaN on SiC D-Mode Transistor Technology
* Unmatched, Ideal for Pulsed / CW Applications
* 50 V Typical Bias, Class AB
* Common-Source Configuration
* Thermally-Enhanced 3 x 6 mm 14-Lead DFN
* MTTF = 600 years (TJ < 200°C)
* Halogen-Free “Green” Mold Compound
* RoHS
