PXAD184218FV - 420W High Power RF LDMOS FET
PXAD184218FV Features
* include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanded LDMOS process, this device provides excellent thermal performance and superior reliability. PXAD184218FV Package H-37275G-6/2 Peak/Average Ratio, Gain (
