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PXAC180602MD - Thermally-Enhanced High Power RF LDMOS FET

PXAC180602MD Description

PXAC180602MD Thermally-Enhanced High Power RF LDMOS FET 60 W, 28 V, 1805 * 1880 MHz .
The PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 18.

PXAC180602MD Features

* include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC180602MD Package PG-HB1DSO-4-1 Peak/Average Ratio, Gain (dB

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Thermally-Enhanced High Power LDMOS FET Infineon
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