Part number:
PXAC180602MD
Manufacturer:
File Size:
393.19 KB
Description:
Thermally-enhanced high power rf ldmos fet.
* include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC180602MD Package PG-HB1DSO-4-1 Peak/Average Ratio, Gain (dB
PXAC180602MD Datasheet (393.19 KB)
PXAC180602MD
393.19 KB
Thermally-enhanced high power rf ldmos fet.
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