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PXAC180602MD Datasheet - Infineon

PXAC180602MD Thermally-Enhanced High Power RF LDMOS FET

PXAC180602MD Features

* include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC180602MD Package PG-HB1DSO-4-1 Peak/Average Ratio, Gain (dB

PXAC180602MD-Infineon.pdf

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Datasheet Details

Part number:

PXAC180602MD

Manufacturer:

Infineon ↗

File Size:

393.19 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXAC180602MD PXAC180602MD Thermally-Enhanced High Power LDMOS FET Infineon

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