PXAC182908FV - Thermally-Enhanced High Power RF LDMOS FET
PXAC182908FV Features
* include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182908FV Package H-37275G-6/2 Peak/Average Ratio
