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PXAC182908FV Datasheet - Infineon

PXAC182908FV Thermally-Enhanced High Power RF LDMOS FET

PXAC182908FV Features

* include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182908FV Package H-37275G-6/2 Peak/Average Ratio

PXAC182908FV-Infineon.pdf

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Datasheet Details

Part number:

PXAC182908FV

Manufacturer:

Infineon ↗

File Size:

318.55 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXAC182908FV PXAC182908FV Thermally-Enhanced High Power LDMOS FET Infineon

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