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PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET

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Description

PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 * 1880 MHz .
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1.

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Features

* include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182002FC Package H-37248-4 Peak/Average Ratio, G

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PXAC182002FC Thermally-Enhanced High Power LDMOS FET Infineon
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