PXAC182002FC Datasheet - Infineon

PXAC182002FC, Thermally-Enhanced High Power RF LDMOS FET

PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 * 1880 MHz .
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1.

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Datasheet Details

Part number:

PXAC182002FC

Manufacturer:

Infineon ↗

File Size:

330.14 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182002FC Package H-37248-4 Peak/Average Ratio, G

PXAC182002FC Distributors

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PXAC182002FC Thermally-Enhanced High Power LDMOS FET Infineon

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