PXAC182002FC - Thermally-Enhanced High Power RF LDMOS FET
PXAC182002FC Features
* include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182002FC Package H-37248-4 Peak/Average Ratio, G
