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PXAC192908FV - Thermally-Enhanced High Power RF LDMOS FET

PXAC192908FV Description

PXAC192908FV Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 * 1995 MHz .
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1.

PXAC192908FV Features

* include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC192908FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%)

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Thermally-Enhanced High Power LDMOS FET Infineon
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