PXAC192908FV Datasheet - Infineon

PXAC192908FV, Thermally-Enhanced High Power RF LDMOS FET

PXAC192908FV Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 * 1995 MHz .
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1.

datasheet Preview Page 1 from Datasheet4u.com

PXAC192908FV-Infineon.pdf

PXAC192908FV Datasheet Preview — Preview of PXAC192908FV PDF

Datasheet Details

Part number:

PXAC192908FV

Manufacturer:

Infineon ↗

File Size:

331.60 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC192908FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%)

PXAC192908FV Distributors

📁 Related Datasheet

PXAC200902FC PXAC203302FV PXAC210552FC PXAC241002FC PXAC261002FC PXAC37

📌 All Tags

PXAC192908FV Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PXAC192908FV-like datasheet