Part number:
PXAC192908FV
Manufacturer:
File Size:
331.60 KB
Description:
Thermally-enhanced high power rf ldmos fet.
PXAC192908FV Datasheet (331.60 KB)
* include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC192908FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%)
PXAC192908FV Datasheet (331.60 KB)
PXAC192908FV
331.60 KB
Thermally-enhanced high power rf ldmos fet.
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