2SD2012 Datasheet - MCC

2SD2012 NPN Silicon Power Transistors

2SD2012 Features

* High DC Current Gain: hFE(1) =100 (Min.)

* Low Saturation Voltage: VCE(sat)=1.0V (Max.)

* High Power Dissipation: PC=25W (TC=25OC)

* Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)

* Epoxy meets UL 94

Datasheet Details

2SD2012

MCC

698.22 KB

Npn silicon power transistors.

2SD2012 Distributor

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2SD2012 2SD2012 NPN Silicon Power Transistors MCC