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MSC0211GE Dual N-Channel MOSFET

MSC0211GE Description

MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General .

MSC0211GE Features

* VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is acquired
* Surface mount package

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Datasheet Details

Part number
MSC0211GE
Manufacturer
MORESEMI
File Size
364.31 KB
Datasheet
MSC0211GE-MORESEMI.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET MORESEMI
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