MSP06065V1, Maple Semiconductor
MSP06065V1
MSP06065V1 650V Silicon Carbide Diode
Features
-650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F.
MSP0625D, MORESEMI
MSP0625D
-60V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V
● High density cell desig.
MSP0625K, MORESEMI
MSP0625K
-60V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V
● High density cell desig.
MSP0650D, MORESEMI
MSP0650D
-60V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
● High density cell design.
MSP0650K, MORESEMI
MSP0650K
-60V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
● High density cell desig.
