* Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. SOT-23-3L Package. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID IDM IS PD TJ, TSTG Gate-Source
MT3401A
MOS-TECH
1.01 MB
P-channel power mosfet.
MOS-TECH Semiconductor Co.,LTD
P-Channel Enhancement Mode Field Effect Transistor
MT3401A
Product Summary
VDS= -30V ID= -4.2A (VGS= -10V)
≦ ΩRDS(ON.
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