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MT19N10E Datasheet - MT Semiconductor

MT19N10E - 100V N-Channel Power MOSFET

 MT19N10E  1&KDQQHO93RZHU02 6)(7 )HDWXUHV ‡ Max RDS(on)=100m: at VGS =10V,ID =8A ‡ Fast Switching Speed ‡ Low Gate Charge ‡ High Power and Current Handling Capability ‡ESD Rating:2000V HBM HQHUDO'HVFULSWLRQ 7KLV1&KDQQHO026)(7LVSURGXFHGXVLQJ0267(&+ 6HPLFRQGXFWRU¶VDGYDQFHG3RZHU7UHQFKSURFHVVWKDWKDV EHHQ HVSHFLDOO WDLORUHG WR PLQLPL]H WKH RQVWDWH UHVLVWDQFH DQG HW PDLQWDLQVXSHULRUVZLWFKLQJSHUIRUPDQFH,WLV(6'3URWHFWHG

MT19N10E-MTSemiconductor.pdf

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Datasheet Details

Part number:

MT19N10E

Manufacturer:

MT Semiconductor

File Size:

799.06 KB

Description:

100v n-channel power mosfet.

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