MT19N10E Datasheet - MT Semiconductor

MT19N10E 100V N-Channel Power MOSFET

MT19N10E 1&KDQQHO93RZHU02 6)(7 )HDWXUHV Max RDS(on)=100m: at VGS =10V,ID =8A Fast Switching Speed Low Gate Charge High Power and Current Handling Capability ESD Rating:2000V HBM HQHUDO'HVFULSWLRQ 7KLV1&KDQQHO026)(7LVSURGXFHGXVLQJ0267(&+ 6HPLFRQGXFWRU¶VDGYDQFHG3RZHU7UHQFKSURFHVVWKDWKDV EHHQ HVSHFLDOO WDLORUHG WR PLQLPL]H WKH RQVWDWH UHVLVWDQFH DQG HW PDLQWDLQVXSHULRUVZLWFKLQJSHUIRUPDQFH,WLV(6'3URWHFWHG .

MT19N10E-MTSemiconductor.pdf