MT19N15 N-Channel 150V Power MOS FET )HDWXUHV Typ RDS (on)=240m:@ VGS =10V,ID =2A Fast Switching Speed Low Gate Charge High Power and Current Handling Capability HQHUDO'HVFULSWLRQ 7KLV1&KDQQHO026)(7LVSURGXFHGXVLQJ0267(&+ 6HPLFRQGXFWRU¶VDGYDQFHG3RZHU7UHQFKSURFHVVWKDWKDV been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
D $SSOLFDWLRQV Power Switching application
