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MT6339N3 - 60V 8A MOSFET

MT6339N3 Description

 MT6339N3 6M0oVd/ 8eAFiCeoldmEpflfeemcteTnrtaanrysiEsntohrancement General .
The MT6339N3 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

MT6339N3 Features

* N-channel P-channel VDS (V) = 60V -60V ID = 8A (VGS =10V) -8A (VGS = -10V) G1 RDS(ON) =35m Ω (VGS=10V) =40m Ω (VGS=4.5V) RDS(ON) =64mΩ (VGS = -10V) =75mΩ (VGS = -4.5V) 100% Rg tested DFN3X3-8L  D1 D2 G2 S1 S2 Top View S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Absolute Maximum Rati

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Datasheet Details

Part number
MT6339N3
Manufacturer
MT Semiconductor
File Size
1.25 MB
Datasheet
MT6339N3-MTSemiconductor.pdf
Description
60V 8A MOSFET

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60V MOSFET MT Semiconductor
MT Semiconductor MT6339N3-like datasheet