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MBQ75T65PEH N-channel MOSFET

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Description

MBQ75T65PEH 650V FieldStop Trench IGBT Datasheet MBQ75T65PEH 650V Field Stop IGBT General .
Features This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and.

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Datasheet Specifications

Part number
MBQ75T65PEH
Manufacturer
MagnaChip
File Size
776.73 KB
Datasheet
MBQ75T65PEH-MagnaChip.pdf
Description
N-channel MOSFET

Features

* This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
* High ruggedness for motor control
* VCE(sat) positive temperature coefficient
* Very soft, fast recovery anti-parallel diode

Applications

* PV Inverter
* UPS Power
* Welder TO-247 G C E Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax Diode forward current, limited by Tvjmax Diode pulsed current, tp limited by Tvjmax Gate-emitter vo

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