MDD06N100 - N-Channel MOSFET

MagnaChip

MDD06N100 Datasheet Preview — Preview of MDD06N100 PDF

Datasheet Details

Part number	MDD06N100
Manufacturer	MagnaChip
File Size	924.13 KB
Description	N-Channel MOSFET
Datasheet	MDD06N100-MagnaChip.pdf

MDD06N100 Product details

Description

The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

Features

 VDS = 60V  ID = 50A @VGS = 10V  RDS(ON) < 10.0 mΩ @VGS = 10V  100% UIL Tested D Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal R.

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Published: Apr 11, 2017 |