MDD06N100 Datasheet, Mosfet, MagnaChip

MDD06N100 Features

  • Mosfet  VDS = 60V  ID = 50A @VGS = 10V  RDS(ON) < 10.0 mΩ @VGS = 10V  100% UIL Tested D Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage C

PDF File Details

Part number:

MDD06N100

Manufacturer:

MagnaChip

File Size:

924.13kb

Download:

📄 Datasheet

Description:

N-channel mosfet. The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching per

Datasheet Preview: MDD06N100 📥 Download PDF (924.13kb)
Page 2 of MDD06N100 Page 3 of MDD06N100

MDD06N100 Application

  • Applications Features  VDS = 60V  ID = 50A @VGS = 10V  RDS(ON) < 10.0 mΩ @VGS = 10V  100% UIL Tested D Absolute Maximum Ratings (Ta = 25oC)

TAGS

MDD06N100
N-Channel
MOSFET
MagnaChip

📁 Related Datasheet

MDD08N067RH - N-channel MOSFET (MagnaChip)
Magnachip Power Technology MDD08N067RH MDD08N067RH Single N-channel Trench MOSFET 78V 6.7mΩ 70A General description The MDD08N067RH uses advanced Ma.

MDD1051 - Single N-channel MOSFET (MagnaChip)
MDD1051 – Single N-Channel Trench MOSFET 150V MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46mΩ ㄹ General Description The MDD1051 uses advanced.

MDD1051RH - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MDD1051RH ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low ga.

MDD1080-18N7 - Diode Modules (IXYS)
IXYS Date: 13th Mar 2013 Data Sheet Issue: 1 Diode Modules MD#1080 Absolute Maximum Ratings VRRM VDRM [V] 1800 2400 2800 1080-18N7 1080-24N7 1080.

MDD1080-24N7 - Diode Modules (IXYS)
IXYS Date: 13th Mar 2013 Data Sheet Issue: 1 Diode Modules MD#1080 Absolute Maximum Ratings VRRM VDRM [V] 1800 2400 2800 1080-18N7 1080-24N7 1080.

MDD1080-28N7 - Diode Modules (IXYS)
IXYS Date: 13th Mar 2013 Data Sheet Issue: 1 Diode Modules MD#1080 Absolute Maximum Ratings VRRM VDRM [V] 1800 2400 2800 1080-18N7 1080-24N7 1080.

MDD10N074RH - N-channel MOSFET (MagnaChip)
Magnachip Power Technology MDD10N074RH MDD10N074RH Single N-channel Trench MOSFET 100V 7.8mΩ 60A FEATURES • Trench power MOSFET technology • Very lo.

MDD142-08N1 - Standard Rectifier (IXYS)
Standard Rectifier Module Phase leg Part number MDD142-08N1 2 13 MDD142-08N1 VRRM I FAV VF = 2x 800 V = 165 A = 1.05 V Backside: isolated Feature.

MDD142-12N1 - Standard Rectifier (IXYS)
Standard Rectifier Module Phase leg Part number MDD142-12N1 2 13 MDD142-12N1 VRRM I FAV VF = 2x 1200 V = 165 A = 1.05 V Backside: isolated Featur.

MDD142-14N1 - Standard Rectifier (IXYS)
Standard Rectifier Module Phase leg Part number MDD142-14N1 2 13 MDD142-14N1 VRRM I FAV VF = 2x 1400 V = 165 A = 1.05 V Backside: isolated Featur.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts