Description
The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 30V ID = 50A @VGS = 10V RDS(ON) < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V
Absoloute Maximun Ratings (Ta = 25 C)
Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy
(2) (1)
o
Symbol VDSS VGSS TC=25 C TC=100 C TC=25 C TC=100 C TA=25 C TA=70 C
o o o o o o
Rating 30 ±20 50 50 150 50 25 3 2.1 100 -55~150
Unit V V A A A W W mJ
o
ID IDM PD PDSM EAS TJ, Tstg
Junction and Storag.
MDD1653_MagnaChip.pdf
