MDD3N50 - N-Channel MOSFET
MDD3N50 Features
* VDS = 500V
* ID = 2.8A
* RDS(ON) ≤ 2.5Ω Applications
* Power Supply
* PFC
* Ballast @VGS = 10V @VGS = 10V Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1)
