MDD3N50G - N-Channel MOSFET
MDD3N50G Features
* VDS = 500V ID = 2.8A RDS(ON) ≤ 2.5Ω Applications Power Supply PFC Ballast @VGS = 10V @VGS = 10V Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive P
