MDS1101 - N-Channel MOSFET
MDS1101 Features
* VDS = 12V ID = 15A @VGS = 4.5V RDS(ON) < 8.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) G 8 Leads, SOIC D S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed