MDS1903 Single N-channel MOSFET

MagnaChip

Description

MDS1903 * Single N-Channel Trench MOSFET 100V MDS1903 Single N-channel Trench MOSFET 100V, 3.3A, 110mΩ ㄹ General .
The MDS1903 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excell.

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Datasheet Specifications

Part number: MDS1903
Manufacturer: MagnaChip
File Size: 1.07 MB
Datasheet: MDS1903-MagnaChip.pdf
Description: Single N-channel MOSFET

Features

*  VDS = 100V  ID = 3.3A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 120mΩ @VGS = 6.0V 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power

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MDS1903 Single N-channel MOSFET MagnaChip

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