MDV10N1K1 - Single N-channel Trench MOSFET

MagnaChip

MDV10N1K1 Datasheet Preview — Preview of MDV10N1K1 PDF

Datasheet Details

Part number	MDV10N1K1
Manufacturer	MagnaChip
File Size	942.90 KB
Description	Single N-channel Trench MOSFET
Datasheet	MDV10N1K1-MagnaChip.pdf

MDV10N1K1 Product details

Description

The MDV10N1K1 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

Features

 VDS = 100V  ID = 12.3A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 116mΩ @VGS = 6.0V  100% UIL Tested DD DD DD DD D S SSG GS SS PDFN33 G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation Single Pulse Avalanche Energy (3) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Thermal Characteristics Characteristics Thermal Resistance, Junctio.

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Published: Apr 17, 2020 |