MDV10N1K1 Single N-channel Trench MOSFET

MagnaChip

Description

MDV10N1K1 * Single N-Channel Trench MOSFET 100V MDV10N1K1 Single N-channel Trench MOSFET 100V, 12.3A, 110mΩ ㄹ General .
The MDV10N1K1 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and exce.

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Datasheet Specifications

Part number: MDV10N1K1
Manufacturer: MagnaChip
File Size: 942.90 KB
Datasheet: MDV10N1K1-MagnaChip.pdf
Description: Single N-channel Trench MOSFET

Features

*  VDS = 100V  ID = 12.3A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 116mΩ @VGS = 6.0V  100% UIL Tested DD DD DD DD D S SSG GS SS PDFN33 G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Curre

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MDV10N1K1 Single N-channel Trench MOSFET MagnaChip

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