MDV10N1K1U - Single N-channel Trench MOSFET
MDV10N1K1U Features
* VDS = 100V ID = 12.3A @VGS = 10V RDS(ON) (MAX) < 110mΩ @VGS = 10V < 116mΩ @VGS = 6.0V 100% UIL Tested DD DD DD DD D S SSG GS SS PDFN33 G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Curre
