SLF12N60C

N-Channel MOSFET

Maple Semiconductor

SLF12N60C Features

* - 12.0A, 600V, RDS(on)typ = 0.51Ω@VGS = 10 V - Low gate charge ( typical 44.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60C SLF12N60C VDSS

SLF12N60C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF12N60C Datasheet (1.31 MB)

SLF12N60C Datasheet Preview — Preview of SLF12N60C PDF

Datasheet Details

Part number:

SLF12N60C

Manufacturer:

Maple Semiconductor

File Size:

1.31 MB

Description:

N-channel mosfet.

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SLF12N60C N-Channel MOSFET Maple Semiconductor

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SLF12N60C Features

SLF12N60C General Description

Datasheet Details

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Description:

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