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SLF12N60C - N-Channel MOSFET

SLF12N60C Description

SLP12N60C / SLF12N60C SLP12N60C / SLF12N60C 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

SLF12N60C Features

* - 12.0A, 600V, RDS(on)typ = 0.51Ω@VGS = 10 V - Low gate charge ( typical 44.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60C SLF12N60C VDSS

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N-Channel MOSFET Maple Semiconductor
Maple Semiconductor SLF12N60C-like datasheet