SLF12N65S

N-Channel MOSFET

Maple Semiconductor

SLF12N65S Features

* - 12A, 650V, RDS(on) typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N65S SLF12N65S VDSS ID IDM VGSS EAS IAR EAR dv/d

SLF12N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF12N65S Datasheet (345.50 KB)

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Datasheet Details

Part number:

SLF12N65S

Manufacturer:

Maple Semiconductor

File Size:

345.50 KB

Description:

N-channel mosfet.

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SLF12N65S N-Channel MOSFET Maple Semiconductor

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SLF12N65S Features

SLF12N65S General Description

Datasheet Details

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Description:

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