SLF12N60UZ

N-Channel MOSFET

Maple Semiconductor

SLF12N60UZ Features

* - 12.0A, 600V, RDS(on)typ = 0.46Ω@VGS = 10 V - Low gate charge ( typical 42.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60UZ SLF12N60UZ VDS

SLF12N60UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF12N60UZ Datasheet (1.31 MB)

SLF12N60UZ Datasheet Preview — Preview of SLF12N60UZ PDF

Datasheet Details

Part number:

SLF12N60UZ

Manufacturer:

Maple Semiconductor

File Size:

1.31 MB

Description:

N-channel mosfet.

📁 Related Datasheet

SLF12N60C N-Channel MOSFET (Maple Semiconductor)

SLF12N65C 650V N-Channel MOSFET (Msemitek)

SLF12N65C N-Channel MOSFET (Maple Semiconductor)

SLF12N65S N-Channel MOSFET (Maple Semiconductor)

SLF12N65SV 650V N-Channel MOSFET (Msemitek)

SLF1255 SMD Shielded Power Inductors (Chilisin)

SLF12555 SMD Inductor (TDK)

SLF1255T SMD Shielded Power Inductors (Chilisin)

SLF1265 SMD Shielded Power Inductors (Chilisin)

SLF1265T SMD Shielded Power Inductors (Chilisin)

TAGS

SLF12N60UZ N-Channel MOSFET Maple Semiconductor

Image Gallery

SLF12N60UZ Features

SLF12N60UZ General Description

Datasheet Details

File Size:

Description:

SLF12N60UZ Distributor