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SLF12N65C

N-Channel MOSFET

SLF12N65C Features

* - 12A, 650V, RDS(on) typ. = 0.6Ω@VGS = 10 V - Low gate charge ( typical 47nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N65C SLF12N65C V

SLF12N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF12N65C Datasheet (1.76 MB)

Preview of SLF12N65C PDF

Datasheet Details

Part number:

SLF12N65C

Manufacturer:

Maple Semiconductor

File Size:

1.76 MB

Description:

N-channel mosfet.

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TAGS

SLF12N65C N-Channel MOSFET Maple Semiconductor

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