SLF7N60C Datasheet - Maple Semiconductor

600V N-Channel MOSFET

SLF7N60C Features

* - 7.0A, 600V, RDS(on)Typ. = 1.0Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP7N60C SLF7N60C VD

SLF7N60C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF7N60C Datasheet (360.82 KB)