Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
Features
- - 11A, 430V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
G
GDS
TO-220
GDS
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP740UZ
S SLF740UZ
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG TL
VESD(G-S)
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current - Pulsed
(N.
SLF740UZ Datasheet
