Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
Features
- - 7.5A, 650V, RDS(on) = 1.4Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
TO-220
TO-220F
G
GDS
GDS
S
Absolute Maximum Ratings TC = 25℃ unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
Sin.
SLF7N65S Datasheet
