Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
Features
- - 7A, 800V, RDS(on)typ. = 1.35Ω@VGS = 10 V - Low gate charge ( typical 38.4nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP7N80C
SLF7N80C
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1).
SLF7N80C Datasheet
