SLF7N70C Datasheet - Maple Semiconductor

SLF7N70C N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF7N70C Features

* - 7.0A, 700V, RDS(on)typ = 1.5Ω@VGS = 10 V - Low gate charge ( typical 23 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G GDS TO-220 GDS TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP7N70C SLF7N70C V

SLF7N70C-MapleSemiconductor.pdf