SLP12N65C

N-Channel MOSFET

Maple Semiconductor

SLP12N65C Features

* - 12A, 650V, RDS(on) typ. = 0.6Ω@VGS = 10 V - Low gate charge ( typical 47nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N65C SLF12N65C V

SLP12N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP12N65C Datasheet (1.76 MB)

SLP12N65C Datasheet Preview — Preview of SLP12N65C PDF

Datasheet Details

Part number:

SLP12N65C

Manufacturer:

Maple Semiconductor

File Size:

1.76 MB

Description:

N-channel mosfet.

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SLP12N65C N-Channel MOSFET Maple Semiconductor

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SLP12N65C Features

SLP12N65C General Description

Datasheet Details

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Description:

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