SLP65R300SJ Datasheet - Maple Semiconductor

SLP65R300SJ N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLP65R300SJ Features

* - 15A, 650V, RDS(on) typ. = 0.27Ω@VGS = 10 V - Low gate charge ( typical 43nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP65R300SJ SLF65R30

SLP65R300SJ-MapleSemiconductor.pdf