SLP65R170E7 Datasheet - Msemitek

SLP65R170E7 60V N-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP65R170E7 Features

* - 22A, 650V, RDS(on) =170mΩ@VGS = 10 V - Low gate charge(typ. Qg = 30.2nC) - High ruggedness Ultra - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220C G DS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR

SLP65R170E7-Msemitek.pdf