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SLP65R170E7 - 60V N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 22A, 650V, RDS(on) =170mΩ@VGS = 10 V - Low gate charge(typ. Qg = 30.2nC) - High ruggedness Ultra - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220C G DS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Cu.

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Datasheet Details

Part number SLP65R170E7
Manufacturer Msemitek
File Size 0.97 MB
Description 60V N-Channel MOSFET
Datasheet download datasheet SLP65R170E7 Datasheet
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SLP65R170E7/SLF65R170E7 SLP65R170E7 / SLF65R170E7 650V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies. Features - 22A, 650V, RDS(on) =170mΩ@VGS = 10 V - Low gate charge(typ. Qg = 30.
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