SLP65R700SJ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

- 7A, 650V, RDS(on) typ. = 0.6Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP65R700SJ SLF65R700SJ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Sing.

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Maple Semiconductor SLP65R700SJ-similar datasheet

Published: Apr 11, 2017 |