SLP65R700SJ Datasheet - Maple Semiconductor

SLP65R700SJ N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLP65R700SJ Features

* - 7A, 650V, RDS(on) typ. = 0.6Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP65R700SJ SLF65R700SJ VD

SLP65R700SJ-MapleSemiconductor.pdf