SLP65R500SJ Datasheet - Maple Semiconductor

N-Channel MOSFET

SLP65R500SJ Features

* - 10A, 650V, RDS(on) typ. = 0.45Ω@VGS = 10 V - Low gate charge ( typical 35nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/

SLP65R500SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLP65R500SJ Datasheet (767.37 KB)

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SLP65R500SJ

Manufacturer:

Maple Semiconductor

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767.37 KB

Description:

N-channel mosfet.

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SLP65R500SJ N-Channel MOSFET Maple Semiconductor

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SLP65R500SJ Features

SLP65R500SJ General Description

Datasheet Details

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