SLP60R190SJ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

- 20A, 600V, RDS(on) typ. = 0.16Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avala.

SLP60R190SJ Stock/Price

📁 Similar Datasheet

SLP65R170E7 - 60V N-Channel MOSFET (Msemitek)
SLP6R-2 - (SLPxxR/S-2) Flex Printed Circuit (Framatome Connectors International)
SLP6S-2 - (SLPxxR/S-2) Flex Printed Circuit (Framatome Connectors International)
SLP-100 - Low Pass Filter (Mini-Circuits)
SLP-100+ - Low Pass Filter (Mini-Circuits)
SLP-1xxx-51 - LED lamp (Sanyo)
SLP-2xxx-51 - LED lamp (Sanyo)
SLP-3117E-51 - 3.1mm yellow-green contact type LED lamp (U-cut version) (Sanyo Semicon Device)

📌 All Tags

Maple Semiconductor SLP60R190SJ-like datasheet