SLP60R190SJ N-Channel MOSFET

Maple Semiconductor

Description

SLP60R190SJ / SLF60R190SJ SLP60R190SJ / SLF60R190SJ 600V N-Channel MOSFET CB-FET General .
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

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Datasheet Specifications

Part number: SLP60R190SJ
Manufacturer: Maple Semiconductor
File Size: 922.35 KB
Datasheet: SLP60R190SJ-MapleSemiconductor.pdf
Description: N-Channel MOSFET

Features

* - 20A, 600V, RDS(on) typ. = 0.16Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/

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SLP60R190SJ N-Channel MOSFET Maple Semiconductor

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