SLP60R460SJ

N-Channel MOSFET

Maple Semiconductor

SLP60R460SJ Features

* - 10A, 600V, RDS(on) typ. = 0.42Ω@VGS = 10 V - Low gate charge ( typical 35nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/

SLP60R460SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLP60R460SJ Datasheet (844.47 KB)

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SLP60R460SJ

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Maple Semiconductor

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844.47 KB

Description:

N-channel mosfet.

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SLP60R460SJ N-Channel MOSFET Maple Semiconductor

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SLP60R460SJ Features

SLP60R460SJ General Description

Datasheet Details

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