SLP60R850SJ Datasheet - Maple Semiconductor

SLP60R850SJ N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLP60R850SJ Features

* - 5A, 600V, RDS(on) typ. = 0.77Ω@VGS = 10 V - Low gate charge ( typical 15nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP60R850SJ SLF60R850

SLP60R850SJ-MapleSemiconductor.pdf