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SLP60R650SJ

N-Channel MOSFET

SLP60R650SJ Features

* - 7A, 600V, RDS(on) typ. = 0.58Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP60R650SJ SLF60R650

SLP60R650SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLP60R650SJ Datasheet (766.51 KB)

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Datasheet Details

Part number:

SLP60R650SJ

Manufacturer:

Maple Semiconductor

File Size:

766.51 KB

Description:

N-channel mosfet.

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SLP60R650SJ N-Channel MOSFET Maple Semiconductor

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