SLP60R280SJ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

- 15A, 600V, RDS(on) typ. = 0.25Ω@VGS = 10 V - Low gate charge ( typical 43nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP60R280SJ SLF60R280SJ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Vo.

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