SLP8N60C

N-Channel MOSFET

Maple Semiconductor

SLP8N60C Features

* - 8A, 600V, RDS(on)typ. = 1.0Ω@VGS = 10 V - Low gate charge ( typical 23nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP8N60C SLF8N60C VDSS

SLP8N60C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP8N60C Datasheet (1.21 MB)

SLP8N60C Datasheet Preview — Preview of SLP8N60C PDF

Datasheet Details

Part number:

SLP8N60C

Manufacturer:

Maple Semiconductor

File Size:

1.21 MB

Description:

N-channel mosfet.

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SLP8N60C N-Channel MOSFET Maple Semiconductor

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SLP8N60C Features

SLP8N60C General Description

Datasheet Details

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Description:

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