SLP8N60C - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLP8N60C
Manufacturer	Maple Semiconductor
File Size	1.21 MB
Description	N-Channel MOSFET
Datasheet	SLP8N60C-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 8A, 600V, RDS(on)typ. = 1.0Ω@VGS = 10 V - Low gate charge ( typical 23nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP8N60C SLF8N60C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gat.

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Published: Apr 11, 2017 |