SLP8N60C Datasheet - Maple Semiconductor

SLP8N60C N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP8N60C Features

* - 8A, 600V, RDS(on)typ. = 1.0Ω@VGS = 10 V - Low gate charge ( typical 23nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP8N60C SLF8N60C VDSS

SLP8N60C Datasheet (1.21 MB)