SLP8N65C - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLP8N65C
Manufacturer	Maple Semiconductor
File Size	1.17 MB
Description	N-Channel MOSFET
Datasheet	SLP8N65C-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 7.5A, 650V, RDS(on) typ. = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP8N65C SLF8N65C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Ga.

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Published: Apr 11, 2017 |