SLP8N65C

N-Channel MOSFET

Maple Semiconductor

SLP8N65C Features

* - 7.5A, 650V, RDS(on) typ. = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP8N65C SLF8N65C V

SLP8N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP8N65C Datasheet (1.17 MB)

SLP8N65C Datasheet Preview — Preview of SLP8N65C PDF

Datasheet Details

Part number:

SLP8N65C

Manufacturer:

Maple Semiconductor

File Size:

1.17 MB

Description:

N-channel mosfet.

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SLP8N65C N-Channel MOSFET Maple Semiconductor

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SLP8N65C Features

SLP8N65C General Description

Datasheet Details

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Description:

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