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SLP8N65U

N-Channel MOSFET

SLP8N65U Features

* - 7.5A, 650V, RDS(on) typ. = 1.2Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/d

SLP8N65U General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP8N65U Datasheet (318.22 KB)

Preview of SLP8N65U PDF

Datasheet Details

Part number:

SLP8N65U

Manufacturer:

Maple Semiconductor

File Size:

318.22 KB

Description:

N-channel mosfet.

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SLP8N65U N-Channel MOSFET Maple Semiconductor

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