SLP8N65S Datasheet - Maple Semiconductor

SLP8N65S N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP8N65S Features

* - 7.5A, 650V, RDS(on) = 1.4Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 TO-220F G GDS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR E

SLP8N65S Datasheet (495.66 KB)