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SLP8N65S

N-Channel MOSFET

SLP8N65S Features

* - 7.5A, 650V, RDS(on) = 1.4Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 TO-220F G GDS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR E

SLP8N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP8N65S Datasheet (495.66 KB)

Preview of SLP8N65S PDF

Datasheet Details

Part number:

SLP8N65S

Manufacturer:

Maple Semiconductor

File Size:

495.66 KB

Description:

N-channel mosfet.

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SLP8N65S N-Channel MOSFET Maple Semiconductor

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